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Электронный компонент: RF2001T2D

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RF2001T2D
Diodes
1/3
Fast recovery diode
RF2001T2D

Applications External dimensions (Unit : mm) Structure
General rectification
1.2
1.3
0.8
2.540.5
2.540.5
(1) (2) (3)
7.2
3.10.1
1.2
7.00.3
0.1
10.00.3
0.1
5.
0
0.
2
8
.
0
0.
2
1
2
.0
0
.2
17
.
0
0
.
4
0.
2
1
.
8
0.
2
2.80.2
0.1
4.50.3
0.1
0.70.015
2.60.03
13
.
5
M
I
N
8.
0
15
.
0
1.1
7.2
7.0
0.8
1.
6
12.
4
3-1.2
1.
35
0
.
7
0.
01
5
2
.
6
0.
0
3
1.
9
9.9
2.
2
0.8
10.0
0.
3
ROHM : O220FN
Manufacture Date

Features
1) Cathode common type.
(TO-220)
2) Ultra Low V
F
3) Very fast recovery
4) Low switching loss

Construction
Silicon epitaxial planar








Absolute maximum ratings (Ta=25
C)
Symbol
Unit
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
0.93
V
I
F
=10A
everse current
I
R
-
-
10
A
V
R
=200V
Reverse recovery time
trr
-
-
30
ns
I
F
=0.5A,I
R
=1A,Irr=0.25*I
R
Parameter
R
V
V
R
)
200
RM
V
R
V
Io
A
I
FSM
A
Tj
Tstg
torage temperature
verage rectified forward current
*1
150
-55 to +150
orward current surge peak
60Hz
1cyc
20
unction temperature
100
*1) Per chip : Io/2
Parameter
everse voltage (DC)
everse voltage (repetitive peak
Limits
200
S
A
F
J
(
R









Electrical characteristic (Ta=25
C)


RF2001T2D
Diodes
2/3
Electrical characteristic curves
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
F
O
RWA
R
D

C
U
RRE
NT
:
I
F
(
A
)
R
E
VE
RS
E

C
U
RR
E
N
T
:
I
R
(
n
A)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
C
A
P
A
C
ITA
N
C
E

B
E
TW
E
E
N
TE
R
M
I
N
A
L
S
:
C
t
(
p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
R
E
V
E
RS
E

C
U
RR
E
N
T
:
I
R
(n
A)
IR DISPERSION MAP
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
EEN
TE
R
M
I
N
A
L
S
:
C
t
(
p
F
)
Ct DISPERSION MAP
IFSM DISRESION MAP
PE
A
K

S
U
R
G
E
F
O
RWA
R
D

C
U
RR
E
N
T
:
I
F
S
M
(A
)
PE
A
K

S
U
R
G
E
F
O
RWA
R
D

C
U
RRE
NT
:
I
F
S
M
(
A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
A
K

S
U
R
G
E
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TR
A
N
S
I
E
N
T
T
H
AE
RM
AL
I
MPE
D
AN
C
E
:
R
t
h

(
/W)
F
O
R
W
AR
D P
O
W
E
R
D
I
SSI
P
A
T
I
ON
:
P
f
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
RE
S
E
RV
E

RE
C
O
V
E
RY

T
I
M
E
:
t
r
r
(
n
s
)
0.001
0.01
0.1
1
10
0
100
200
300 400
500 600
700
800
900 1000
Ta=150
Ta=125
Ta=75
Ta=25
Ta=-25
0.1
1
10
100
1000
10000
0
50
100
150
200
250
300
Ta=-25
Ta=25
Ta=75
Ta=125
Ta=150
1
10
100
1000
0
10
20
30
f=1MHz
320
330
340
350
360
370
380
390
400
AVE:352.9pF
Ta=25
f=1MHz
VR=0V
n=10pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25
VR=300V
n=30pcs
AVE:10.1nA
840
850
860
870
880
890
AVE:867.0mV
Ta=25
IF=10A
n=30pcs
0
50
100
150
200
250
300
AVE:237.0A
8.3ms
Ifsm
1cyc
0
5
10
15
20
25
30
AVE:20.2ns
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1
10
100
1000
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
D=1/2
DC
Sin(180)
0.1
1
10
100
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA
IF=10A
300us
time
Mounted on epoxy board
10
100
1
10
100












V)
F
O
R
W
AR
D

V
O
L
T
AG
E
:
VF
(m






















1000
t
Ifsm
F
O
RWA
R
D

C
U
RRE
N
T
:
I
F
S
M
(
A)










RF2001T2D
Diodes
3/3
AMBIENT TEMPERATURE:Ta()
Derating curv e (Io-Ta)
AV
E
R
AG
E

RE
C
T
I
F
I
D
E
AV
E
R
AG
E

R
E
C
T
I
F
I
E
D
FO
R
W
A
R
D

C
U
R
R
E
N
T
:
I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating curv e (Io-Tc)
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
DC
D=1/2
Sin(180)
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
D=1/2
DC
Sin(180)
T
Tj=150
D=t/T
t
VR
Io
VR=100V
0A
0V
T
Tj=150
D=t/T
t
VR
Io
VR=100V
0A
0V
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
No break at 30kV
E
L
E
C
TR
O
S
TA
TI
C
D
D
I
S
C
H
A
R
G
E

T
ES
T

ES
D
(
K
V
)
ESD DISPERSION MAP
F
O
RWA
R
D

C
U
RRE
NT
:
I
o
(
A)








Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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